tssop-8 unit: mm features v ds (v) = 20v i d = 7a (v gs =10v) r ds(on) 21m (v gs = 10v) r ds(on) 24m (v gs = 4.5v ) r ds(on) 32m (v gs = 2.5v ) r ds(on) 50m (v gs = 1.8v ) absolute maxim um rating s t a = 2 5 paramet er sym bol rating unit dra in-sour ce v oltage v ds 20 v gate-sour ce v oltage v gs 12 v con tinuous drain cur rent *1 t a =25 7 t a =70 5.7 pulsed drain cur rent *2 i dm 30 pow er dissipation *1 t a =25 1.5 t a =70 0.96 ma x im um j unction-to-am bient *1 t 10s 83 ma x im um j unction-to-am bient *1 s teady- stat e 130 junct ion and storage tem pera ture ran ge t j , t stg -55 to 150 *1the va lue of r ja is m easured w ith t he dev ice m ounted on 1in 2 fr-4 boar d w ith 2oz. coppe r, in a st ill air environ m ent w ith t a =25 *2 repe tit ive rating, pulse w idth lim ited by junction t em pera ture. r ja /w i d p d a w g1 s1 s1 d1/d2 g2 s2 s2 d1/d2 1 2 3 4 8 7 6 5 g1 d1 s1 g2 d2 s2 si 88 22 smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
s m d ty p e i c s m d ty p e m o s f e t el ectrical characteristics t a = 2 5 paramet er sym bol test onditons min typ ma x unit dra in-sour ce b reakdow n voltage v dss i d =250 a, v gs =0v 20 v v ds =16v, v gs =0v 1 v ds =16v, v gs =0v ,t j =55 5 gate-body leakage current i gss v ds =0v, v gs = 10v 100 na gate threshold voltage v gs(th) v ds =v gs i d =250 a 0.5 0.8 1 v on st ate drain curre nt i d(on) v gs =4.5v, v ds =5v 30 a v gs =10v, i d =7a 16.5 21 v gs =4.5v, i d =7a t j =125 23 28 v gs =4.5v, i d =6.6a 19 24 v gs =2.5v, i d =5.5a 25 32 v gs =1.8v, i d =2a 36 50 forw ard tra nsconductance g fs v ds =5v, i d =7a 24 s input capacitance c i ss 630 output capa cit ance c oss 164 rev erse transfer capa cit ance c rss 137 gate resist ance r g v gs =0v, v ds =0v, f =1m hz 1.5 total gate charge q g 9.3 gate source char ge q gs 0.6 gate drain charg e q gd 3.6 turn- on delay tim e t d(on) 5.7 ns turn- on rise tim e t r 11.5 ns turn- off delay tim e t d(off) 31.5 ns turn- off falltim e t f 9.7 ns body diod e rev erse recove ry tim e t rr i f =7a, d i /d t =100 a/ s 15.2 ns body diod e rev erse recove ry ch arge q rr i f =7a, d i /d t =100 a/ s 6.3 nc ma x im um body-d iode co ntinuous curr ent i s 2.5 a diode forw ard voltage v sd i s =1a,v gs =0v 0.7 1 v v gs =5v, v ds =10v, r l =1.4 ,r gen =3 i dss zero gate voltage dra in curr ent stati c dra in-sour ce on-resist ance r ds(on) a v gs =0v, v ds =10v, f=1mhz v gs =4.5v, v ds = =10v, i d =7a m pf nc c mark ing mar king 8822 si 88 22 smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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